ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,913, issued on March 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Self-aligned backside contact integration for transistors" was invented by Nikhil Jain (Apple Valley, Minn.), Sagarika Mukesh (Albany, N.Y.), Devika Sarkar Grant (Amsterdam, N.Y.), Prabudhya Roy Chowdhury (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Kisik Choi (Watervliet, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device. The semiconductor device comprises a transistor comprising a plurality of source/drain epitaxies. The semiconductor device further comprises at least one backside power rail under the transistor....