ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,549, issued on March 25, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).
"Transistor device having a comb-shaped channel region to increase the effective gate width" was invented by Kangguo Cheng (Schenectady, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a comb-shaped transistor device is provided. The method includes forming a stack of alternating sacrificial spacer segments and channel segments on a substrate. The method further includes forming channel sidewalls on opposite sides of the stack of alternating sacrificial spacer segments and channel segments, and dividing the stack of alternating sac...