US Patent Issued to International Business Machines on March 25 for "Source/drain epitaxy process in stacked FET" (New York Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,552, issued on March 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Source/drain epitaxy process in stacked FET" was invented by Tsung-Sheng Kang (Ballston Lake, N.Y.), Daniel Schmidt (Niskayuna, N.Y.), Alexander Reznicek (Troy, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a first set of nanosheets and a second set of nanosheets on top of the first set of nanosheets, wherein the first set of nanosheets has an uppermost nanosheet and the second set of nanosheets has a...