US Patent Issued to International Business Machines on March 25 for "Semiconductor device with strained channel" (New York Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,173, issued on March 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor device with strained channel" was invented by Shogo Mochizuki (Mechanicville, N.Y.) and Nicolas Loubet (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a p-type field-effect transistor region and an n-type field-effect transistor region. The p-type field-effect transistor region includes a strained channel of a composite of silicon germanium and silicon. The n-type field-effect transistor region includes a silicon channel."

The patent was filed on Sept. 2, 2021, under Application No. 17/4...