US Patent Issued to INTERNATIONAL BUSINESS MACHINES on March 18 for "Vertical FET replacement gate formation with variable fin pitch" (New York Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,204, issued on March 18, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Vertical FET replacement gate formation with variable fin pitch" was invented by Ruilong Xie (Niskayuna, N.Y.), Yao Yao (Albany, N.Y.), Andrew M. Greene (Slingerlands, N.Y.) and Veeraraghavan S. Basker (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first set of fins and a second set of fins, a dielectric pillar disposed between the first set of fins and the second set of fins, a bottom source/drain (S/D) region directly contacting a bottom surface of the first and second set of fins, and a top S/D r...