ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,554, issued on March 18, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Embedded MRAM integrated with super via and dummy fill" was invented by Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Dimitri Houssameddine (Sunnyvale, Calif.) and Julien Frougier (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a plurality of magnetic random-access memory (MRAM) cells in a first region of the device; and a dummy MRAM pillar disposed in a second region of the device, wherein the dummy MRAM pillar is not connected to an active metal feature."

The patent was filed on Sept. 27, 2021, under ...