US Patent Issued to International Business Machines on March 11 for "Magneto-resistive random access memory with substitutional bottom electrode" (New York Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,250,827, issued on March 11, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Magneto-resistive random access memory with substitutional bottom electrode" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Lisamarie White (Staatsburg, N.Y.), Willie Lester Muchrison Jr. (Troy, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic tunnel junction pillar is positioned above a bottom electrode composed of a metal-oxide region in contact with a first portion of the magnetic tunnel junction pillar and a metal region surrounding the metal-oxide region. A sidewall spacer is posit...