US Patent Issued to International Business Machines on June 3 for "Tall bottom electrode structure in embedded magnetoresistive random-access memory" (New York Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,358, issued on June 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Tall bottom electrode structure in embedded magnetoresistive random-access memory" was invented by Ashim Dutta (Clifton Park, N.Y.), Lili Cheng (Rexford, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate having an embedded memory area interconnect structure and an embedded non-memory area interconnect structure is provided, the memory area interconnect structure comprising metal interconnects form...