US Patent Issued to INTERNATIONAL BUSINESS MACHINES on June 3 for "Spin-based gate-all-around transistors" (New York Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,197, issued on June 3, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Spin-based gate-all-around transistors" was invented by Julien Frougier (Albany, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Chanro Park (Clifton Park, N.Y.), Andrew Gaul (Halfmoon, N.Y.) and Min Gyu Sung (Latham, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a field effect transistor (FET) with at least one Gate-All-Around (GAA) channel. A first conductive ferromagnetic Source/Drain contact is electrically connected with a first portion of the GAA channel. A second conductive ferromagnetic S...