US Patent Issued to International Business Machines on June 3 for "Diffusion-break region in stacked-FET integrated circuit device" (New York Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,237, issued on June 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Diffusion-break region in stacked-FET integrated circuit device" was invented by Ruilong Xie (Niskayuna, N.Y.), Alexander Reznicek (Troy, N.Y.), Daniel Schmidt (Niskayuna, N.Y.) and Tsung-Sheng Kang (Ballston Lake, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stacked field effect transistor (stacked-FET) device includes a first layer comprising at least one first layer transistor structure comprising a plurality of first layer terminals, a diffusion break dielectric fill region adjacent to one of the first layer terminals, a second layer overlying a...