ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,738, issued on June 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Resistive memory for analog computing" was invented by Kangguo Cheng (Schenectady, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided that includes a method and structure for forming a resistive memory (RRAM) which has a gradual instead of abrupt change of resistance during programming, rendering it suitable for analog computing. In a first embodiment: One electrode of the inventive RRAM comprises a metal-nitride material (e.g., titanium nitride (TiN)) with gradually changing concentration of a metal composition (e.g., titanium...