US Patent Issued to International Business Machines on June 24 for "Phase-change memory cell with mixed-material switchable region" (New York Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,736, issued on June 24, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Phase-change memory cell with mixed-material switchable region" was invented by Matthew Joseph BrightSky (Armonk, N.Y.), Cheng-Wei Cheng (White Plains, N.Y.), Guy M. Cohen (Westchester, N.Y.), Robert L. Bruce (White Plains, N.Y.), Asit Ray (Baldwin, N.Y.) and Wanki Kim (Chappaqua, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device includes a first electrode, a second electrode, and a memory component configured to store a resistive state. The memory component includes a layered region arranged in direct contact with the first electrod...