US Patent Issued to International Business Machines on June 17 for "Gate-cut and separation techniques for enabling independent gate control of stacked transistors" (New York, California Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,294, issued on June 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Gate-cut and separation techniques for enabling independent gate control of stacked transistors" was invented by Ruilong Xie (Niskayuna, N.Y.), Nicolas Loubet (Guilderland, N.Y.), Julien Frougier (Albany, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.), Prasad Bhosale (Albany, N.Y.), Junli Wang (Slingerlands, N.Y.), Balasubramanian Pranatharthiharan (Santa Clara, Calif.) and Dechao Guo (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention include vertically stacked field-effect transistors (FETs). The vertically...