US Patent Issued to International Business Machines on June 17 for "Fin stack including tensile-strained and compressively strained fin portions" (New York Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,279, issued on June 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Fin stack including tensile-strained and compressively strained fin portions" was invented by Kangguo Cheng (Schenectady, N.Y.), Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin stack including compressively strained and tensile-strained semiconductor fin regions allows CMOS fabrication to form vertically stacked p-type FinFETs and n-type FinFETs. Aspect ratio trapping within a semiconductor base region within the fin stack provides a relaxed semiconductor...