US Patent Issued to International Business Machines on June 10 for "Phase change memory programming current leakage reduction" (New York, New Jersey Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,329,045, issued on June 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Phase change memory programming current leakage reduction" was invented by Injo Ok (Loudonville, N.Y.), Soon-Cheon Seo (Glenmont, N.Y.), Alexander Reznicek (Troy, N.Y.), Youngseok Kim (Upper Saddle River, N.J.) and Timothy Mathew Philip (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a PCM stack that includes bottom electrode liner over a lower heater. The bottom electrode liner has a top-down view plus (+) geometry with a 'horizontal' portion being orthogonal to a 'vertical' portion. An airgap is formed within ...