US Patent Issued to INTERNATIONAL BUSINESS MACHINES on June 10 for "CPP-agnostic source-drain contact formation for gate-all-around devices with dielectric isolation" (New York Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,916, issued on June 10, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"CPP-agnostic source-drain contact formation for gate-all-around devices with dielectric isolation" was invented by Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Chanro Park (Clifton Park, N.Y.) and Oleg Gluschenkov (Tannersville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is presented including source/drain (S/D) epitaxial growth formed over a bottom dielectric isolation region, at least one first semiconductor layer disposed within the S/D epitaxial growth in a S/D regi...