US Patent Issued to International Business Machines on June 10 for "Applying inert ion beam etching for improving a profile and repairing sidewall damage for phase change memory devices" (New York, New Jersey Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,329,044, issued on June 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Applying inert ion beam etching for improving a profile and repairing sidewall damage for phase change memory devices" was invented by Luxherta Buzi (Yorktown Heights, N.Y.), Thitima Suwannasiri (Oak Ridge, N.J.), Lynne Marie Gignac (Beacon, N.Y.), Robert L. Bruce (White Plains, N.Y.) and Sebastian Ulrich Engelmann (White Plains, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process of improving a profile and repairing sidewall damage for phase change memory devices. The process includes applying inert ion beam etching to trim a sidewall of a layer...