US Patent Issued to International Business Machines on July 8 for "Vertical field-effect transistor with isolation pillars" (Vermont, New York Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,709, issued on July 8, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical field-effect transistor with isolation pillars" was invented by Brent A. Anderson (Jericho, Vt.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first vertical field-effect transistor comprising a first set of vertical fins and a second set of vertical fins separated by a first isolation pillar structure. The semiconductor device further includes a second vertical field-effect transistor adjacent to the first vertical field-effect transistor, the second vertical field-effect transisto...