ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,330, issued on July 22, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Self-aligned crossbar-compatible electrochemical memory structure" was invented by John Rozen (Hastings on Hudson, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure is provided. The memory structure includes a top terminal, a multi-level nonvolatile electrochemical cell, a bottom terminal, a pedestal contact in the same metal level as the bottom terminal, and a vertical conductor fully self-aligned to the multi-level nonvolatile electrochemical cell and extending vertically from the pedestal contact."

The patent was filed on Nov. 19, ...