US Patent Issued to International Business Machines on July 22 for "MRAM top electrode structure with liner layer" (New York Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,494, issued on July 22, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM top electrode structure with liner layer" was invented by Hsueh-Chung Chen (Cohoes, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Chanro Park (Clifton Park, N.Y.), Yann Mignot (Slingerlands, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a memory including a bottom electrode, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and an upper electrode on the MTJ stack. The semiconductor device also includes at least one dielectric la...