US Patent Issued to International Business Machines on July 15 for "Stacked transistor layout for improved cell height scaling" (New York, New Hampshire Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,965, issued on July 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked transistor layout for improved cell height scaling" was invented by Ruilong Xie (Niskayuna, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Albert M. Chu (Nashua, N.H.), Daniel James Dechene (Colonie, N.Y.), Eric Miller (Watervliet, N.Y.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention include a first source region and a first drain region forming a first L-shaped layout. The first source and drain regions are formed on a bottom gate spacer material. Embodiments inc...