US Patent Issued to International Business Machines on July 15 for "Spin-orbit-torque (SOT) MRAM with doubled layer of SOT metal" (New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,361,995, issued on July 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Spin-orbit-torque (SOT) MRAM with doubled layer of SOT metal" was invented by Pouya Hashemi (Purchase, N.Y.) and Christopher Safranski (Yorktown Heights, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic random access memory (MRAM) apparatus and method are provided. The apparatus includes a magnetic tunnel junction (MTJ) stack; a spin-orbit-torque (SOT) layer that underlies the MTJ stack; and a dielectric pillar that underlies the SOT layer and the MTJ stack. The SOT layer has a stepped profile. The method includes forming a dielectric base of...