ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,004, issued on July 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Scaled 2T DRAM" was invented by Min Gyu Sung (Latham, N.Y.), Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Chanro Park (Clifton Park, N.Y.) and Juntao Li (Cohoes, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a dynamic random-access-memory (DRAM), and the DRAM includes a vertical transistor and a nanosheet transistor, the vertical transistor being stacked on top of the nanosheet transistor, where a bottom source/drain of the verti...