US Patent Issued to International Business Machines on July 15 for "Fabrication of embedded memory devices utilizing a self assembled monolayer" (New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,913, issued on July 15, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Fabrication of embedded memory devices utilizing a self assembled monolayer" was invented by Ashim Dutta (Menands, N.Y.), Ekmini Anuja De Silva (Slingerlands, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a metallization stack comprising one or more patterned metal layers. A bi-layer dielectric cap is disposed on and in contact with the metallization stack. At least one memory device is disposed on the bi-layer dielectric cap. A method for forming the metallization stack in...