US Patent Issued to INTERNATIONAL BUSINESS MACHINES on July 1 for "Hybrid gate cut for stacked transistors" (New York Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,406, issued on July 1, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Hybrid gate cut for stacked transistors" was invented by Ruilong Xie (Niskayuna, N.Y.), Chen Zhang (Guilderland, N.Y.), Jingyun Zhang (Albany, N.Y.) and Carl Radens (LaGrangeville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of forming the same include forming a first stack of nanosheets in a first region, the first stack of nanosheets including upper first nanosheets and lower first nanosheets. A second stack of nanosheets is formed in a second region, the second stack of nanosheets including upper second nanosheets...