US Patent Issued to International Business Machines on Jan. 28 for "Field effect transistors comprising a matrix of gate-all-around channels" (New York Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,848, issued on Jan. 28, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Field effect transistors comprising a matrix of gate-all-around channels" was invented by Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Kangguo Cheng (Schenectady, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor structure with shared gated devices. The semiconductor structure comprises a substrate and a bottom dielectric isolation (BDI) layer on top of the substrate. The structure further comprises a pFET region that includes a p-doped Source-Drain epitaxy material and a ...