US Patent Issued to International Business Machines on Jan. 27 for "Magneto-resistive random access memory with laterally-recessed free layer" (Chinese, American Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,714, issued on Jan. 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Magneto-resistive random access memory with laterally-recessed free layer" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Kenneth Chun Kuen Cheng (Shatin, Hong Kong), Joseph F. Maniscalco (Lake Katrine, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device with a laterally-recessed free layer includes forming a bottom electrode above an electrically conductive structure embedded within an interconnect dielectric material. A magneti...