US Patent Issued to International Business Machines on Jan. 27 for "Fully-aligned and dielectric damage-less top via interconnect structure" (Chinese, American Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,785, issued on Jan. 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Fully-aligned and dielectric damage-less top via interconnect structure" was invented by Koichi Motoyama (Clifton Park, N.Y.), Chanro Park (Clifton Park, N.Y.), Kenneth Chun Kuen Cheng (Shatin, Hong Kong), Hsueh-Chung Chen (Cohoes, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure is provided the includes a top electrically conductive via structure that is fully-aligned to a bottom electrically conductive line structure. The interconnect structure has a maximized contact area between the top e...