ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,553, issued on Jan. 27, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Contact structure for power delivery on semiconductor device" was invented by Ruilong Xie (Niskayuna, N.Y.), Huai Huang (Clifton Park, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Hosadurga Shobha (Niskayuna, N.Y.) and Albert M. Chu (Nashua, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure with improved backside metal contacts includes a plurality of source/drain regions within a field effect transistor. A backside metal contact is el...