ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,670, issued on Jan. 20, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Vertical transmon structure and its fabrication process" was invented by Masao Tokunari (Yokohama, Japan), Naoki Kanazawa (Yokohama, Japan), Akihiro Horibe (Yokohama, Japan) and Kuniaki Sueoka (Sagamihara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical transmon qubit structure, includes a substrate having a first surface and a second surface. A through-silicon-via (TSV) is located in the substrate. A first electrode of a Josephson junction (JJ) is located on a portion of the first surface of the substrate and adjacent to the TSV. A second ...