US Patent Issued to International Business Machines on Jan. 13 for "Stacked FET vertical diode" (Vermont, New York Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,076, issued on Jan. 13, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked FET vertical diode" was invented by Terence Hook (Jericho Center, Vt.) and Anthony I. Chou (Guilderland, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a stacked FET vertical diode is provided. The stacked FET vertical diode includes vertically stacked source/drain regions of opposite conductivity that are electrically connected by a semiconductor material layer that is positioned between the vertically stacked source/drain regions."

The patent was filed on May 10, 2023, under Application No. 18/195,701.

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