ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,007, issued on Jan. 13, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Phase change memory with improved recovery from element segregation" was invented by Kangguo Cheng (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is presented for reducing element segregation of a phase change material (PCM). The method includes forming a bottom electrode, constructing a layered stack over the bottom electrode, the layered stack including the PCM separated by one or more electrically conductive and chemically stable materials, and forming a top electrode over the layered stack. The PCM is Ge-Sb-Te (germanium-ant...