US Patent Issued to International Business Machines on Jan. 13 for "MRAM structure with chiral spin-orbit-torque metal electrode" (New York Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,231, issued on Jan. 13, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM structure with chiral spin-orbit-torque metal electrode" was invented by Pouya Hashemi (Purchase, N.Y.) and Jonathan Zanhong Sun (Shrub Oak, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive random access memory (MRAM) structure is provided that includes a chiral spin-orbit-torque (SOT) metal bottom electrode under the bottom magnetic free layer where the chiral SOT metal bottom electrode is surrounded by a via dielectric. The chiral SOT metal bottom electrode enables the charge current, spin current and spin polarization directio...