US Patent Issued to International Business Machines on Jan. 13 for "Memory device with reduced threshold voltage" (Swiss, American Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,003, issued on Jan. 13, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Memory device with reduced threshold voltage" was invented by Ghazi Sarwat Syed (Kilchberg, Switzerland), Timothy Mathew Philip (Albany, N.Y.), Vara Sudananda Prasad Jonnalagadda (Wallisellen, Switzerland), Abu Sebastian (Adliswil, Switzerland) and Matthew Joseph BrightSky (Armonk, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods for forming the semiconductor devices are described. A semiconductor device can include a first electrode, a storage node, a second electrode and a film layer. The storage node can include phas...