US Patent Issued to International Business Machines on Jan. 13 for "Backside contact with shallow placeholder and easy backside semiconductor removal" (New York Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,032, issued on Jan. 13, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Backside contact with shallow placeholder and easy backside semiconductor removal" was invented by Tao Li (Slingerlands, N.Y.), Shogo Mochizuki (Mechanicville, N.Y.), Kisik Choi (Watervliet, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first source-drain region; a second source-drain region; at least one channel region coupling the first and second source-drain regions; and a gate adjacent the at least one channel region. A bottom dielectric isolation region is located inward of ...