ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,219,884, issued on Feb. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Phase change memory with conductive rings" was invented by Kangguo Cheng (Schenectady, N.Y.), Carl Radens (LaGrangeville, N.Y.), Juntao Li (Cohoes, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Praneet Adusumilli (Somerset, N.J.), Oscar van der Straten (Guilderland Center, N.Y.), Alexander Reznicek (Troy, N.Y.), Zuoguang Liu (Schenectady, N.Y.) and Arthur Gasasira (Halfmoon, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase change memory, system, and method for gradually changing the conductance and resistance of the phase change memory while preventing re...