US Patent Issued to International Business Machines on Feb. 3 for "Transition metal dichalcogenide (TMD) transistor structure" (New York, California Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,358, issued on Feb. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Transition metal dichalcogenide (TMD) transistor structure" was invented by Liqiao Qin (Albany, N.Y.), Heng Wu (Santa Clara, Calif.), Ruilong Xie (Niskayuna, N.Y.) and Tian Shen (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a semiconductor substrate, a lower metal contact disposed upon the semiconductor substrate, a gate structure disposed upon the lower metal contact, an upper metal contact disposed upon the gate structure, and a plurality of semiconductor carriers disposed in contact with both the lower...