US Patent Issued to International Business Machines on Feb. 3 for "Stacked field effect transistor contacts" (New York, New Hampshire Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,554, issued on Feb. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked field effect transistor contacts" was invented by Junli Wang (Slingerlands, N.Y.), Albert M. Chu (Nashua, N.H.), Albert M. Young (Fishkill, N.Y.), Chen Zhang (Guilderland, N.Y.), Su Chen Fan (Cohoes, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a first source/drain region (S/D) located on a frontside of a substrate, wherein the first source/drain region has a first width, a second S/D region located on the frontside of the substrate, wherein the second source/drain region is lo...