US Patent Issued to International Business Machines on Feb. 17 for "Vertical field-effect transistor (FET) stacked over horizontal FET" (New York, California Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,354, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical field-effect transistor (FET) stacked over horizontal FET" was invented by Ruilong Xie (Niskayuna, N.Y.), Heng Wu (Santa Clara, Calif.), Julien Frougier (Albany, N.Y.) and Min Gyu Sung (Latham, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A nanosheet stack of alternating nanosheets of a sacrificial semiconductor material nanosheet and a semiconductor channel material nanosheet and adjacent source/drain regions are provided, wher...