ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,298, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Resistive random access memory on a buried bitline" was invented by Biswanath Senapati (Mechanicville, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.), Albert M. Chu (Nashua, N.H.), Ruilong Xie (Niskayuna, N.Y.) and Seiji Munetoh (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided that includes a resistive random access memory located on a surface of a bitline that is embedded in a shallow trench isolation structure. The structure can further include a source line ...