ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,295, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Embedded ReRAM with backside contact" was invented by Min Gyu Sung (Latham, N.Y.), Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Chanro Park (Clifton Park, N.Y.), Juntao Li (Cohoes, N.Y.), Soon-Cheon Seo (Glenmont, N.Y.), Takashi Ando (Eastchester, N.Y.), Chen Zhang (Guilderland, N.Y.) and Heng Wu (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a one-transistor one-capacitor (1T1R) device is provided that includes an embedded resistive random access memory (ReRAM) having a width large...