US Patent Issued to International Business Machines on Feb. 11 for "Field effect transistors with bottom dielectric isolation" (New York Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,312, issued on Feb. 11, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Field effect transistors with bottom dielectric isolation" was invented by Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Andrew M. Greene (Slingerlands, N.Y.) and Veeraraghavan S. Basker (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device fabricated by forming FET fins from a layered semiconductor structure. The layered semiconductor structure incudes a sacrificial layer. Further by forming dummy gate structures on the FET fins, recessing the FET fins between dummy gate structures, growing source-drain ...