US Patent Issued to International Business Machines on Feb. 10 for "Vertical inverter formation on stacked field effect transistor (SFET)" (New York Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,427, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical inverter formation on stacked field effect transistor (SFET)" was invented by Min Gyu Sung (Latham, N.Y.), Julien Frougier (Albany, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present invention are directed to stacked field effect transistors (SFETs) having integrated vertical inverters. In a non-limiting embodiment, a first nanosheet is vertically stacked over a second nanosheet. A common gate is formed around a channe...