US Patent Issued to International Business Machines on Feb. 10 for "Top electrode to metal line connection for magneto-resistive random-access memory stack height reduction" (New York Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,620, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Top electrode to metal line connection for magneto-resistive random-access memory stack height reduction" was invented by Ruilong Xie (Niskayuna, N.Y.), Tao Li (Albany, N.Y.), Tsung-Sheng Kang (Ballston Lake, N.Y.), Alexander Reznicek (Troy, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magneto-resistive random access memory device includes a top electrode electrically connected to a conductive interconnect through a metal capping layer located above a top surface and opposite sidewalls of the top electrode, the ...