ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,420, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Top contact structures for stacked transistors" was invented by Su Chen Fan (Cohoes, N.Y.), Dominik Metzler (Clifton Park, N.Y.), Hemanth Jagannathan (Niskayuna, N.Y.), Jing Guo (Fremont, Calif.), Jay William Strane (Warwick, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a dielectric isolation region between and electrical isolating a first top contact of a first stacked transistor from a second top contact of a second stacked transistor, where at least one vertical surface of the ...