ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,705, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Self-aligned backside gate contact" was invented by Tsung-Sheng Kang (Ballston Lake, N.Y.), Alexander Reznicek (Troy, N.Y.), Tushar Gupta (Albany, N.Y.) and Sagarika Mukesh (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a first field effect transistor (FET) region, a second FET region and a backside signal distribution network (BSSDN). The first FET region includes a substrate, interlayer dielectric (ILD), shallow trench isolation (STI) disposed in the substrate and a conta...