ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,629, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Self-aligned, symmetric phase change memory element" was invented by Kangguo Cheng (Schenectady, N.Y.), Zuoguang Liu (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.) and Arthur Gasasira (Halfmoon, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A phase change memory element including at least one phase change material layer, and a heater conductor, wherein at least a portion of the heater conductor is circumferentially surrounded by the at least one phase change material layer. The phase change memory element is symmetrical. The phase change memory elemen...