US Patent Issued to International Business Machines on Feb. 10 for "MRAM with doped silicon-germanium-tin alloy electrodes" (New York Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,625, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM with doped silicon-germanium-tin alloy electrodes" was invented by Pouya Hashemi (Purchase, N.Y.) and Alexander Reznicek (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to a semiconductor device. The semiconductor device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and a top electrode on the MTJ stack. At least one of the bottom electrode and the top electrode includes doped SiGeSn."

The patent was filed on Sept. 13, 2022, under Application No. 17/...