ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,713, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Hybrid buried power rail structure with dual front side and backside processing" was invented by Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Hosadurga Shobha (Niskayuna, N.Y.), Huai Huang (Clifton Park, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface. An electronic device is integrated into the top surface of the semiconductor substrate. A conductive power rail is positi...