ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,715, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Heterogeneous integration of device die having BSPDN" was invented by Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Mukta Ghate Farooq (Hopewell Junction, N.Y.) and Kisik Choi (Watervliet, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a semiconductor structure. The structure includes a device die including a device layer; a back-end-of-line (BEOL) structure on a frontside of the device layer and a frontside substrate attached to the BEOL structure; and a backside power distribution network (BSPDN...